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This article is cited in 33 scientific papers (total in 33 papers)
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Defect-impurity engineering in implanted silicon
A. R. Chelyadinskiia, F. F. Komarovb a Belarusian State University, Faculty of Physics
b A.N. Sevchenko Research Institute of Applied Physical Problems, Byelorussian State University
Abstract:
The basic results of the studies of defect – impurity interaction in implanted silicon are presented. Factors affecting the way in which quasichemical reactions proceed — namely, temperature, level of ionization, and internal electric and elastic-stress fields — are analyzed. Methods for suppressing residual damage effects (rodlike defects, dislocation loops), and schemes for reducing the impurity diffusivity and for gettering metallic impurities in implanted silicon are considered. Examples of the practical realization of defect-impurity engineering are presented and discussed.
Received: November 27, 2002 Revised: April 29, 2003
Citation:
A. R. Chelyadinskii, F. F. Komarov, “Defect-impurity engineering in implanted silicon”, UFN, 173:8 (2003), 813–846; Phys. Usp., 46:8 (2003), 789–820
Linking options:
https://www.mathnet.ru/eng/ufn2163 https://www.mathnet.ru/eng/ufn/v173/i8/p813
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Abstract page: | 325 | Full-text PDF : | 117 | References: | 56 | First page: | 1 |
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