1. |
M. E. Levinshteĭn, P. A. Ivanov, Q. J. Zhang, J. W. Palmour, “Isothermal current–voltage characteristics of high-voltage 4$H$-SiC junction barrier Schottky rectifiers”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 668–673 ; Semiconductors, 50:5 (2016), 656–661 |
1
|