|
|
|
Publications in Math-Net.Ru |
Citations |
|
2017 |
| 1. |
N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, M. V. Virko, V. S. Kogotkov, A. A. Leonidov, P. N. Vorontsov-Velyaminov, I. A. Sheremet, Yu. G. Shreter, “Hopping conductivity and dielectric relaxation in Schottky barriers on GaN”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1235–1242   ; Semiconductors, 51:9 (2017), 1186–1193 |
10
|
| 2. |
V. V. Voronenkov, M. V. Virko, V. S. Kogotkov, A. A. Leonidov, A. V. Pinchuk, A. S. Zubrilov, R. I. Gorbunov, F. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Yu. Davydov, I. A. Sheremet, Yu. G. Shreter, “On the laser lift-off of lightly doped micrometer-thick $n$-GaN films from substrates via the absorption of IR radiation in sapphire”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 116–123 ; Semiconductors, 51:1 (2017), 115–121 |
2
|
|
2016 |
| 3. |
M. V. Virko, V. S. Kogotkov, A. A. Leonidov, V. V. Voronenkov, Yu. T. Rebane, A. S. Zubrilov, R. I. Gorbunov, F. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Yu. Davydov, Yu. G. Shreter, “On the laser detachment of $n$-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in $n^+$-GaN substrates”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 711–716 ; Semiconductors, 50:5 (2016), 699–704 |
4
|
|
| Organisations |
|
| |
|
|
Contact us: