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Publications in Math-Net.Ru |
Citations |
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2016 |
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D. N. Lobanov, A. V. Novikov, P. A. Yunin, E. V. Skorokhodov, M. V. Shaleev, M. N. Drozdov, O. I. Khrykin, O. A. Buzanov, V. V. Alenkov, P. I. Folomin, A. B. Gritsenko, “Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1532–1536   ; Semiconductors, 50:11 (2016), 1511–1514 |
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| 2. |
M. N. Drozdov, Yu. N. Drozdov, P. A. Yunin, P. I. Folomin, A. B. Gritsenko, V. L. Kryukov, E. V. Kryukov, “Extremely deep profiling analysis of the atomic composition of thick ($>$ 100 $\mu$m) GaAs layers within power PIN diodes by secondary ion mass spectrometry”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:15 (2016), 27–35 ; Tech. Phys. Lett., 42:8 (2016), 783–787 |
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