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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
D. N. Slapovskiy, A. Yu. Pavlov, V. Yu. Pavlov, A. V. Klekovkin, “Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 461–466   ; Semiconductors, 51:4 (2017), 438–443 |
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A. Yu. Pavlov, V. Yu. Pavlov, D. N. Slapovskiy, “The thermal stability of nonalloyed ohmic contacts to AlGaN/GaN heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017), 96–103 ; Tech. Phys. Lett., 43:11 (2017), 1043–1046 |
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2016 |
| 3. |
K. N. Tomosh, A. Yu. Pavlov, V. Yu. Pavlov, R. A. Khabibullin, S. S. Arutyunyan, P. P. Maltsev, “Investigation of the fabrication processes of AlGaN/AlN/GaN ÍÅÌÒs with in situ Si$_{3}$N$_{4}$ passivation”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1434–1438 ; Semiconductors, 50:10 (2016), 1416–1420 |
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S. S. Arutyunyan, A. Yu. Pavlov, V. Yu. Pavlov, K. N. Tomosh, Yu. V. Fedorov, “On a two-layer Si$_{3}$N$_{4}$/SiO$_{2}$ dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1138–1142 ; Semiconductors, 50:8 (2016), 1117–1121 |
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