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Publications in Math-Net.Ru |
Citations |
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2018 |
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V. I. Altukhov, A. V. Sankin, A. S. Sigov, D. K. Sysoev, È. G. Yanukyan, S. V. Filippova, “Schottky-barrier model nonlinear in surface-state concentration and calculation of the I–V characteristics of diodes based on SiC and its solid solutions in the composite charge-transport model”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 366–369   ; Semiconductors, 52:3 (2018), 348–351 |
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2016 |
| 2. |
V. I. Altukhov, I. S. Kasyanenko, A. V. Sankin, B. A. Bilalov, A. S. Sigov, “Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1190–1194 ; Semiconductors, 50:9 (2016), 1168–1172 |
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