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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 9, Pages 1190–1194
(Mi phts6360)
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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide
V. I. Altukhova, I. S. Kasyanenkoa, A. V. Sankina, B. A. Bilalovb, A. S. Sigovc a Institute of Service, Tourism and Design (Branch), North Caucasian Federal University, Pyatigorsk, Russia
b Daghestan State Technical University, Makhachkala, Russia
c Moscow State Technical University of Radio Engineering, Electronics, and Automation
Abstract:
A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of $n$-$M/p$-(SiC)$_{1-x}$(AlN)$_{x}$ structures. The results of calculations are compared to experimental data.
Received: 19.08.2015 Accepted: 01.03.2016
Citation:
V. I. Altukhov, I. S. Kasyanenko, A. V. Sankin, B. A. Bilalov, A. S. Sigov, “Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1190–1194; Semiconductors, 50:9 (2016), 1168–1172
Linking options:
https://www.mathnet.ru/eng/phts6360 https://www.mathnet.ru/eng/phts/v50/i9/p1190
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Abstract page: | 49 | Full-text PDF : | 77 |
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