|
|
|
Publications in Math-Net.Ru |
Citations |
|
2018 |
| 1. |
V. V. Kozlovsky, A. È. Vasil'ev, P. A. Karaseov, A. A. Lebedev, “Formation of radiation defects by proton braking in lightly doped $n$- and $p$-SiC layers”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 327–332   ; Semiconductors, 52:3 (2018), 310–315 |
4
|
|
2017 |
| 2. |
V. V. Kozlovsky, A. A. Lebedev, A. M. Strel'chuk, K. S. Davydovskaja, A. È. Vasil'ev, L. F. Makarenko, “Effect of the energy of bombarding electrons on the conductivity of $n$-4$H$-SiC (CVD) epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 311–316 ; Semiconductors, 51:3 (2017), 299–304 |
3
|
|
| Organisations |
|
|
Contact us: