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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
S. È. Tyaginov, A. A. Makarov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser, “Impact of the device geometric parameters on hot-carrier degradation in FinFETs”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1631–1635   ; Semiconductors, 52:13 (2018), 1738–1742 |
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| 2. |
A. A. Makarov, S. È. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser, “Analysis of the features of hot-carrier degradation in FinFETs”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1177–1182 ; Semiconductors, 52:10 (2018), 1298–1302 |
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| 3. |
S. È. Tyaginov, A. A. Makarov, M. Jech, M. I. Vexler, J. Franco, B. Kaczer, T. Grasser, “Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 254–259 ; Semiconductors, 52:2 (2018), 242–247 |
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