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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor physics
Analysis of the features of hot-carrier degradation in FinFETs
A. A. Makarova, S. È. Tyaginovab, B. Kaczerc, M. Jecha, A. Chasinc, A. Grilla, G. Hellingsc, M. I. Vexlerb, D. Lintenc, T. Grassera a TU Vienna, Institute for Microelectronics, Vienna, Austria
b Ioffe Institute, St. Petersburg
c IMEC, Leuven, Belgium
Abstract:
For the first time, hot-carrier degradation (HCD) is simulated in non-planar field-effect transistors with a fin-shaped channel (FinFETs). For this purpose, a physical model considering single-carrier and multiple-carrier silicon–hydrogen bond breaking processes and their superpositions is used. To calculate the bond-dissociation rate, carrier energy distribution functions are used, which are determined by solving the Boltzmann transport equation. A HCD analysis shows that degradation is localized in the channel region adjacent to the transistor drain in the top channel-wall region. Good agreement between the experimental and calculated degradation characteristics is achieved with the same model parameters which were used for HCD reproduction in planar short-channel transistors and high-power semiconductor devices.
Keywords:
FinFET, High-power Semiconductor Devices, Bond Breaking Rate, Boltzmann Transport Equation, Silicon Hydrogen Bonds.
Received: 24.02.2018 Accepted: 27.02.2018
Citation:
A. A. Makarov, S. È. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser, “Analysis of the features of hot-carrier degradation in FinFETs”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1177–1182; Semiconductors, 52:10 (2018), 1298–1302
Linking options:
https://www.mathnet.ru/eng/phts5711 https://www.mathnet.ru/eng/phts/v52/i10/p1177
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