A. I. Titov, K. V. Karabeshkin, P. A. Karaseov, A. I. Struchkov, “Do chemical effects affect the accumulation of structural damage during the implantation of fluorine ions into GaN?”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1455–1458; Semiconductors, 53:11 (2019), 1415–1418
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