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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
N. V. Vostokov, V. M. Daniltsev, S. A. Kraev, V. L. Kryukov, E. V. Skorokhodov, S. S. Strelchenko, V. I. Shashkin, “Vertical field-effect transistor with control $p$–$n$-junction based on GaAs”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1311–1314   ; Semiconductors, 53:10 (2019), 1279–1281 |
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2017 |
| 2. |
A. V. Murel, V. B. Shmagin, V. L. Kryukov, S. S. Strelchenko, E. A. Surovegina, V. I. Shashkin, “Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1538–1542 ; Semiconductors, 51:11 (2017), 1485–1489 |
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2016 |
| 3. |
M. N. Drozdov, Yu. N. Drozdov, P. A. Yunin, P. I. Folomin, A. B. Gritsenko, V. L. Kryukov, E. V. Kryukov, “Extremely deep profiling analysis of the atomic composition of thick ($>$ 100 $\mu$m) GaAs layers within power PIN diodes by secondary ion mass spectrometry”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:15 (2016), 27–35 ; Tech. Phys. Lett., 42:8 (2016), 783–787 |
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