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Publications in Math-Net.Ru |
Citations |
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2019 |
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G. M. Umnyagin, V. E. Degtyarov, S. V. Obolensky, “Numerical simulation of the current–voltage characteristics of bilayer resistive memory based on non-stoichiometric metal oxides”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1275–1278   ; Semiconductors, 53:9 (2019), 1246–1248 |
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2017 |
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V. E. Degtyarov, S. V. Khazanova, A. A. Konakov, “Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1462–1467 ; Semiconductors, 51:11 (2017), 1409–1414 |
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