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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
E. V. Erofeev, I. V. Fedin, V. V. Fedina, A. P. Fazleev, “Low-temperature Ta/Al-based ohmic contacts to AlGaN/GaN heteroepitaxial structures on silicon wafers”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 249–252   ; Semiconductors, 53:2 (2019), 237–240 |
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2017 |
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E. V. Erofeev, I. V. Fedin, V. V. Fedina, M. V. Stepanenko, A. V. Yuryeva, “High-voltage MIS-gated GaN transistors”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1278–1281 ; Semiconductors, 51:9 (2017), 1229–1232 |
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| 3. |
E. V. Erofeev, I. V. Fedin, I. V. Kutkov, Y. N. Yurjev, “Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 253–257 ; Semiconductors, 51:2 (2017), 245–248 |
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2016 |
| 4. |
E. V. Erofeev, A. I. Kazimirov, I. V. Fedin, V. A. Kagadei, “Formation of the low-resistivity compound Cu$_{3}$Ge by low-temperature treatment in an atomic hydrogen flux”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1258–1262 ; Semiconductors, 50:9 (2016), 1236–1240 |
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