Formation of the low-resistivity compound Cu$_{3}$Ge by low-temperature treatment in an atomic hydrogen flux

The systematic features of the formation of the low-resistivity compound Cu$_{3}$Ge by low-temperature treatment of a Cu/Ge two-layer system in an atomic hydrogen flux are studied. The Cu/Ge two-layer system is deposited onto an $i$-GaAs substrate. Treatment of the Cu/Ge/$i$-GaAs system, in which the layer thicknesses are, correspondingly, 122 and 78 nm, in atomic hydrogen with a flux density of 10$^{15}$ at cm$^2$ s$^{-1}$ for 2.5–10 min at room temperature induces the interdiffusion of Cu and Ge, with the formation of a polycrystalline film containing the stoichiometric Cu$_{3}$Ge phase. The film consists of vertically oriented grains 100–150 nm in size and exhibits a minimum resistivity of 4.5 $\mu\Omega$ cm. Variations in the time of treatment of the Cu/Ge/i-GaAs samples in atomic hydrogen affect the Cu and Ge depth distribution, the phase composition of the films, and their resistivity. Experimental observation of the synthesis of the Cu$_{3}$Ge compound at room temperature suggests that treatment in atomic hydrogen has a stimulating effect on both the diffusion of Cu and Ge and the chemical reaction of Cu$_{3}$Ge-compound formation. These processes can be activated by the energy released upon the recombination of hydrogen atoms adsorbed at the surface of the Cu/Ge/$i$-GaAs sample.