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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
A. G. Banshchikov, Yu. Yu. Illarionov, M. I. Vexler, S. Wachter, N. S. Sokolov, “Trends in reverse-current change in tunnel MIS diodes with calcium fluoride on Si(111) upon the formation of an extra oxide layer”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 844–849   ; Semiconductors, 53:6 (2019), 833–837 |
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2018 |
| 2. |
S. È. Tyaginov, A. A. Makarov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser, “Impact of the device geometric parameters on hot-carrier degradation in FinFETs”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1631–1635 ; Semiconductors, 52:13 (2018), 1738–1742 |
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| 3. |
A. A. Makarov, S. È. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser, “Analysis of the features of hot-carrier degradation in FinFETs”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1177–1182 ; Semiconductors, 52:10 (2018), 1298–1302 |
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| 4. |
M. I. Vexler, “Simulating tunneling electron transport in the semiconductor–crystalline insulator–Si(111) system”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 900–905 ; Semiconductors, 52:8 (2018), 1031–1036 |
| 5. |
S. È. Tyaginov, A. A. Makarov, M. Jech, M. I. Vexler, J. Franco, B. Kaczer, T. Grasser, “Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 254–259 ; Semiconductors, 52:2 (2018), 242–247 |
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| 6. |
Yu. Yu. Illarionov, A. G. Banshchikov, N. S. Sokolov, S. Wachter, M. I. Vexler, “Nonmonotonic change in the tunnel conductivity of an MIS structure with a two-layer insulator with an increase in its thickness (by the example of the metal/SiO$_{2}$/CaF$_{2}$/Si system)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 150–157 ; Tech. Phys. Lett., 44:12 (2018), 1188–1191 |
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2017 |
| 7. |
M. I. Vexler, Yu. Yu. Illarionov, I. V. Grekhov, “Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 467–471 ; Semiconductors, 51:4 (2017), 444–448 |
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2016 |
| 8. |
M. I. Vexler, I. V. Grekhov, “Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-$K$-oxide/SiO$_{2}$/Si structure”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 683–688 ; Semiconductors, 50:5 (2016), 671–677 |
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| 9. |
M. I. Vexler, G. G. Kareva, Yu. Yu. Illarionov, I. V. Grekhov, “Resonant electron tunneling and related charging phenomena in metal–oxide–$p^+$-Si nanostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 62–69 ; Tech. Phys. Lett., 42:11 (2016), 1090–1093 |
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