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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
E. V. Erofeev, I. V. Fedin, V. V. Fedina, A. P. Fazleev, “Low-temperature Ta/Al-based ohmic contacts to AlGaN/GaN heteroepitaxial structures on silicon wafers”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 249–252   ; Semiconductors, 53:2 (2019), 237–240 |
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2018 |
| 2. |
D. Yu. Protasov, D. V. Gulyaev, A. K. Bakarov, A. I. Toropov, E. V. Erofeev, K. S. Zhuravlev, “Increasing saturated electron-drift velocity in donor–acceptor doped phemt heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018), 77–84 ; Tech. Phys. Lett., 44:3 (2018), 260–262 |
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2017 |
| 3. |
E. V. Erofeev, I. V. Fedin, V. V. Fedina, M. V. Stepanenko, A. V. Yuryeva, “High-voltage MIS-gated GaN transistors”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1278–1281 ; Semiconductors, 51:9 (2017), 1229–1232 |
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E. V. Erofeev, I. V. Fedin, I. V. Kutkov, Y. N. Yurjev, “Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 253–257 ; Semiconductors, 51:2 (2017), 245–248 |
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2016 |
| 5. |
E. V. Erofeev, A. I. Kazimirov, I. V. Fedin, V. A. Kagadei, “Formation of the low-resistivity compound Cu$_{3}$Ge by low-temperature treatment in an atomic hydrogen flux”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1258–1262 ; Semiconductors, 50:9 (2016), 1236–1240 |
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