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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
A. V. Almaev, N. N. Yakovlev, E. V. Chernikov, O. P. Tolbanov, “Selective sensors of nitrogen dioxide based on thin tungsten oxide films under optical irradiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 7–10   ; Tech. Phys. Lett., 45:10 (2019), 1016–1019 |
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2018 |
| 2. |
V. M. Kalygina, I. L. Remizova, O. P. Tolbanov, “Conductivity of Ga$_{2}$O$_{3}$–GaAs heterojunctions”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 154–160 ; Semiconductors, 52:2 (2018), 143–149 |
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| 3. |
I. A. Prudaev, M. G. Verkholetov, A. D. Koroleva, O. P. Tolbanov, “Charge carrier transport and deep levels recharge in avalanche $S$-diodes based on GaAs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018), 21–29 ; Tech. Phys. Lett., 44:6 (2018), 465–468 |
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2016 |
| 4. |
V. M. Kalygina, I. M. Egorova, V. À. Novikov, I. A. Prudaev, O. P. Tolbanov, “Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO$_{2}$–Si structures”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1178–1184 ; Semiconductors, 50:9 (2016), 1156–1162 |
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| 5. |
V. M. Kalygina, I. M. Egorova, I. A. Prudaev, O. P. Tolbanov, “Conduction in titanium dioxide films and metal–TiO$_{2}$–Si structures”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1036–1040 ; Semiconductors, 50:8 (2016), 1015–1019 |
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