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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, E. O. Parshin, N. S. Melesov, S. G. Simakin, “Dislocation-related photoluminescence in silicon implanted with germanium ions”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 165–168   ; Semiconductors, 53:2 (2019), 156–159 |
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N. A. Sobolev, O. V. Aleksandrov, V. I. Sakharov, I. T. Serenkov, E. I. Shek, A. E. Kalyadin, E. O. Parshin, N. S. Melesov, “Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 161–164 ; Semiconductors, 53:2 (2019), 153–155 |
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V. I. Bachurin, N. S. Melesov, E. O. Parshin, A. S. Rudyi, A. B. Churilov, “Study of multilayer thin film structures by Rutherford backscattering spectrometry”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:12 (2019), 26–29 ; Tech. Phys. Lett., 45:6 (2019), 609–612 |
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