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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
O. Naumova, B. I. Fomin, E. V. Dmitrienko, I. A. Pyshnaya, D. V. Pyshnyi, “Surface modification of SOI sensors for the detection of RNA biomarkers”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 394–399   ; Semiconductors, 54:4 (2020), 471–475 |
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| 2. |
E. G. Zaytseva, O. Naumova, B. I. Fomin, “Profiling mobility components near the heterointerfaces of thin silicon films”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 124–128 ; Semiconductors, 54:2 (2020), 176–180 |
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2019 |
| 3. |
Zh. V. Smagina, V. A. Zinovyev, E. E. Rodyakina, B. I. Fomin, M. V. Stepikhova, A. N. Yablonskii, S. A. Gusev, A. V. Novikov, A. V. Dvurechenskii, “Ordered arrays of Ge(Si) quantum dots embedded in two-dimensional photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1366–1371 ; Semiconductors, 53:10 (2019), 1329–1333 |
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2018 |
| 4. |
Zh. V. Smagina, V. A. Zinovyev, G. K. Krivyakin, E. E. Rodyakina, P. A. Kuchinskaya, B. I. Fomin, A. N. Yablonskii, M. V. Stepikhova, A. V. Novikov, A. V. Dvurechenskii, “Study of the structural and emission properties of Ge(Si) quantum dots ordered on the Si(001) surface”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1028–1033 ; Semiconductors, 52:9 (2018), 1150–1155 |
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2017 |
| 5. |
E. G. Zaytseva, O. Naumova, B. I. Fomin, “Electron mobility in the inversion layers of fully depleted SOI films”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 446–452 ; Semiconductors, 51:4 (2017), 423–429 |
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