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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
P. B. Boldyrevskii, D. O. Filatov, À. D. Filatov, I. A. Kazantseva, M. V. Revin, P. A. Yunin, “Atomic force microscopy examination of elementary processes in metalorganic compound hydride epitaxy of GaAs-based nanoheterostructures”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 826–830   ; Tech. Phys., 65:5 (2020), 791–794 |
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2018 |
| 2. |
P. B. Boldyrevskii, D. O. Filatov, I. A. Kazantseva, M. V. Revin, D. S. Smotrin, P. A. Yunin, “Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers”, Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018), 219–223 ; Tech. Phys., 63:2 (2018), 211–215 |
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2017 |
| 3. |
D. O. Filatov, I. A. Kazantseva, V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, A. P. Gorshkov, V. P. Mishkin, “Investigation of spatial distribution of photocurrent in the plane of a Si $p$–$n$ photodiode with GeSi nanoislands by scanning near-field optical microscopy”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 563–568 ; Semiconductors, 51:4 (2017), 536–541 |
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2016 |
| 4. |
D. O. Filatov, I. A. Kazantseva, V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, N. A. Alyabina, “A random telegraph signal in tunneling silicon $p$–$n$ junctions with GeSi nanoislands”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016), 94–101 ; Tech. Phys. Lett., 42:4 (2016), 435–437 |
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