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Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 88, Issue 2, Pages 219–223
DOI: https://doi.org/10.21883/JTF.2018.02.45411.2405 (Mi jtf5992) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Physical science of materials

Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers

P. B. Boldyrevskiia, D. O. Filatova, I. A. Kazantsevaa, M. V. Revina, D. S. Smotrina, P. A. Yuninb

a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (1245 kB) Citations (1)
DOI: https://doi.org/10.21883/JTF.2018.02.45411.2405
Abstract: The influence of the rotation frequency of a disk substrate holder on the growth mechanism and crystal structure characteristics of MOCVD-grown GaAs layers has been studied. In the frequency range of 0–400 rpm, variations have been observed in the growth mechanism and rate, as well as of crystal perfection.
Received: 24.06.2017
English version:
Technical Physics, 2018, Volume 63, Issue 2, Pages 211–215
DOI: https://doi.org/10.1134/S1063784218020068
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. B. Boldyrevskii, D. O. Filatov, I. A. Kazantseva, M. V. Revin, D. S. Smotrin, P. A. Yunin, “Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers”, Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018), 219–223; Tech. Phys., 63:2 (2018), 211–215
Citation in format AMSBIB
\Bibitem{BolFilKaz18}
\by P.~B.~Boldyrevskii, D.~O.~Filatov, I.~A.~Kazantseva, M.~V.~Revin, D.~S.~Smotrin, P.~A.~Yunin
\paper Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 88
\issue 2
\pages 219--223
\mathnet{http://mi.mathnet.ru/jtf5992}
\crossref{https://doi.org/10.21883/JTF.2018.02.45411.2405}
\elib{https://elibrary.ru/item.asp?id=32739978}
\transl
\jour Tech. Phys.
\yr 2018
\vol 63
\issue 2
\pages 211--215
\crossref{https://doi.org/10.1134/S1063784218020068}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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