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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
N. M. Shmidt, E. I. Shabunina, A. E. Chernyakov, A. E. Ivanov, N. À. Talnishnikh, A. L. Zakhgeim, “Temperature-dependent decrease in efficiency in power blue InGaN/GaN LEDs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 45–48   ; Tech. Phys. Lett., 46:12 (2020), 1253–1256 |
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2019 |
| 2. |
A. A. Lebedev, M. E. Levinshteĭn, P. A. Ivanov, V. V. Kozlovsky, A. M. Strel'chuk, E. I. Shabunina, L. Fursin, “Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1604–1608 ; Semiconductors, 53:12 (2019), 1568–1572 |
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| 3. |
V. A. Dobrov, V. V. Kozlovsky, A. V. Mescheryakov, V. G. Usychenko, A. S. Chernova, E. I. Shabunina, N. M. Shmidt, “Effect of electron irradiation with an energy of 0.9 MeV on the I–V characteristics and low-frequency noise in 4$H$-SiC pin diodes”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 555–561 ; Semiconductors, 53:4 (2019), 545–551 |
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2018 |
| 4. |
V. V. Emtsev, E. V. Gushchina, V. N. Petrov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, A. P. Kartashova, A. A. Zybin, V. V. Kozlovsky, M. F. Kudoyarov, A. V. Sakharov, G. A. Oganesyan, D. S. Poloskin, V. V. Lundin, “Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 804–811 ; Semiconductors, 52:7 (2018), 942–949 |
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2016 |
| 5. |
V. N. Petrov, V. G. Sidorov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, H. Helava, Yu. N. Makarov, “On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1195–1201 ; Semiconductors, 50:9 (2016), 1173–1179 |
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