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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. N. Aleshin, N. V. Zenchenko, O. A. Ruban, “Numerical simulation of the current–voltage characteristic of a bipolar hafnium-oxide memristor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 39–42   ; Tech. Phys. Lett., 47:9 (2021), 636–640 |
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2019 |
| 2. |
A. N. Aleshin, A. S. Bugaev, O. A. Ruban, V. V. Saraikin, N. Yu. Tabachkova, I. V. Shchetinin, “Energy expenditure upon the formation of the elastically stressed state in the layers of a step-graded metamorphic buffer in a heterostructure grown on a (001) GaAs substrate”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1086–1094 ; Semiconductors, 53:8 (2019), 1066–1074 |
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2017 |
| 3. |
A. N. Aleshin, A. S. Bugaev, O. A. Ruban, N. Yu. Tabachkova, I. V. Shchetinin, “Comparative analysis of strain fields in layers of step-graded metamorphic buffers of various designs”, Fizika Tverdogo Tela, 59:10 (2017), 1956–1963 ; Phys. Solid State, 59:10 (2017), 1978–1986 |
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D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, A. Yu. Pavlov, D. N. Slapovskiy, I. A. Glinskiy, D. V. Lavrukhin, O. A. Ruban, P. P. Maltsev, “Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1267–1272 ; Semiconductors, 51:9 (2017), 1218–1223 |
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