Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 13, Pages 39–42
DOI: https://doi.org/10.21883/PJTF.2021.13.51121.18415
(Mi pjtf4749)
 

This article is cited in 4 scientific papers (total in 4 papers)

Numerical simulation of the current–voltage characteristic of a bipolar hafnium-oxide memristor

A. N. Aleshin, N. V. Zenchenko, O. A. Ruban

V. G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
Full-text PDF (266 kB) Citations (4)
Abstract: In this paper, we develop a finite element model that allows calculating the current-voltage characteristic of a bipolar memristor based on Pt/HfO$_2$/TiN hafnium oxide, which reflects both the high- and low-resistance states of the memristor. Maxwell’s equations for the stationary case served as the mathematical basis of the model. The model allows evaluating the relation between the properties of materials included in the structure of the memristor and its operating current.
Keywords: bipolar memristor, hafnium oxide, finite element method, modeling.
Funding agency Grant number
Russian Foundation for Basic Research 19-29-03003 ÌÊ
This work was supported by the Russian Foundation for Basic Research, project no. 19-29-03003 MK.
Received: 06.06.2020
Revised: 22.03.2021
Accepted: 06.04.2021
English version:
Technical Physics Letters, 2021, Volume 47, Issue 9, Pages 636–640
DOI: https://doi.org/10.1134/S1063785021070026
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. N. Aleshin, N. V. Zenchenko, O. A. Ruban, “Numerical simulation of the current–voltage characteristic of a bipolar hafnium-oxide memristor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 39–42; Tech. Phys. Lett., 47:9 (2021), 636–640
Citation in format AMSBIB
\Bibitem{AleZenRub21}
\by A.~N.~Aleshin, N.~V.~Zenchenko, O.~A.~Ruban
\paper Numerical simulation of the current–voltage characteristic of a bipolar hafnium-oxide memristor
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 13
\pages 39--42
\mathnet{http://mi.mathnet.ru/pjtf4749}
\crossref{https://doi.org/10.21883/PJTF.2021.13.51121.18415}
\elib{https://elibrary.ru/item.asp?id=46321850}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 9
\pages 636--640
\crossref{https://doi.org/10.1134/S1063785021070026}
Linking options:
  • https://www.mathnet.ru/eng/pjtf4749
  • https://www.mathnet.ru/eng/pjtf/v47/i13/p39
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:58
    Full-text PDF :27
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024