|
This article is cited in 4 scientific papers (total in 4 papers)
Numerical simulation of the current–voltage characteristic of a bipolar hafnium-oxide memristor
A. N. Aleshin, N. V. Zenchenko, O. A. Ruban V. G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
Abstract:
In this paper, we develop a finite element model that allows calculating the current-voltage characteristic of a bipolar memristor based on Pt/HfO$_2$/TiN hafnium oxide, which reflects both the high- and low-resistance states of the memristor. Maxwell’s equations for the stationary case served as the mathematical basis of the model. The model allows evaluating the relation between the properties of materials included in the structure of the memristor and its operating current.
Keywords:
bipolar memristor, hafnium oxide, finite element method, modeling.
Received: 06.06.2020 Revised: 22.03.2021 Accepted: 06.04.2021
Citation:
A. N. Aleshin, N. V. Zenchenko, O. A. Ruban, “Numerical simulation of the current–voltage characteristic of a bipolar hafnium-oxide memristor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 39–42; Tech. Phys. Lett., 47:9 (2021), 636–640
Linking options:
https://www.mathnet.ru/eng/pjtf4749 https://www.mathnet.ru/eng/pjtf/v47/i13/p39
|
Statistics & downloads: |
Abstract page: | 58 | Full-text PDF : | 27 |
|