|
|
|
Publications in Math-Net.Ru |
Citations |
|
2023 |
| 1. |
E. A. Baranov, V. A. Nepomnyashchikh, V. O. Konstantinov, V. G. Shchukin, I. E. Merkulova, A. O. Zamchiy, N. A. Lunev, V. A. Volodin, A. A. Shapovalova, “Influence of current density on the structure of thin films of amorphous silicon suboxide during electron beam annealing”, Prikl. Mekh. Tekh. Fiz., 64:5 (2023), 52–58   ; J. Appl. Mech. Tech. Phys., 64:5 (2024), 778–783 |
|
2022 |
| 2. |
E. A. Baranov, A. O. Zamchiy, N. A. Lunev, I. E. Merkulova, V. A. Volodin, M. R. Sharafutdinov, A. A. Shapovalova, “High-temperature annealing of thin silicon suboxide films produced by the method of gas-jet chemical deposition with activation by electron-beam plasma”, Prikl. Mekh. Tekh. Fiz., 63:5 (2022), 33–41 ; J. Appl. Mech. Tech. Phys., 63:5 (2022), 757–764 |
1
|
|
2021 |
| 3. |
I. E. Merkulova, A. O. Zamchiy, N. A. Lunev, V. O. Konstantinov, E. A. Baranov, “Effect of annealing temperature on the kinetics of aluminum-induced crystallization of silicon suboxide thin films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 39–42 |
| 4. |
N. A. Lunev, A. O. Zamchiy, E. A. Baranov, I. E. Merkulova, V. O. Konstantinov, I. V. Korolkov, E. A. Maximovskiy, V. A. Volodin, “Gold-induced crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 35–38 ; Tech. Phys. Lett., 47:10 (2021), 726–729 |
3
|
| 5. |
E. A. Baranov, V. O. Konstantinov, V. G. Shchukin, A. O. Zamchiy, I. E. Merkulova, N. A. Lunev, V. A. Volodin, “Electron-beam crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 26–28 ; Tech. Phys. Lett., 47:3 (2021), 263–265 |
1
|
|
2020 |
| 6. |
A. O. Zamchiy, E. A. Baranov, I. E. Merkulova, N. A. Lunev, V. A. Volodin, E. A. Maximovskiy, “Indium-induced crystallization of thin films of amorphous silicon suboxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:12 (2020), 14–17 ; Tech. Phys. Lett., 46:6 (2020), 583–586 |
2
|
|
| Organisations |
|
| |
|
|
Contact us: