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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
T. B. Nikulicheva, E. A. Pilyuk, O. N. Ivanov, A. A. Morocho Amboya, M. N. Yapryntsev, “Quantum corrections to conductivity in an amorphous semiconductor”, Applied Mathematics & Physics, 54:3 (2022), 186–191  |
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2021 |
| 2. |
M. N. Yapryntsev, O. N. Ivanov, A. E. Vasil’ev, M. V. Zhezhu, D. A. Popkov, “Synthesis, structure and anisotropy of thermoelectric properties of Bi$_{2}$Te$_{2.7}$Se$_{0.3}$ compound doped with samarium”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1156–1161  |
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| 3. |
A. V. Nejencev, E. A. Pilyuk, T. B. Nikulicheva, V. S. Zakhvalinskii, M. N. Yapryntsev, “Transport properties of thin films of $Cd_3As_2$ and its solid solutions”, Applied Mathematics & Physics, 53:3 (2021), 243–251 |
| 4. |
T. B. Nikulicheva, V. S. Zakhvalinskii, O. Ivanov, E. A. Pilyuk, M. N. Yapryntsev, V. Novikov, M. Saenko, A. V. Borisenko, “Quantum corrections in cadmium arsenide films”, Applied Mathematics & Physics, 53:1 (2021), 46–52 |
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2019 |
| 5. |
A. E. Vasil'ev, M. N. Yapryntsev, O. N. Ivanov, M. V. Zhezhu, “Thermoelectric properties of Bi$_{2-x}$Lu$_{x}$Te$_{2.7}$Se$_{0.3}$ solid solutions”, Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 680–684 ; Semiconductors, 53:5 (2019), 673–677 |
| 6. |
M. N. Yapryntsev, A. E. Vasil'ev, O. N. Ivanov, “Influence of the sintering temperature on the thermoelectric properties of the Bi$_{1.9}$Gd$_{0.1}$Te$_{3}$ compound”, Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 620–625 ; Semiconductors, 53:5 (2019), 615–619 |
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2017 |
| 7. |
M. N. Yapryntsev, R. A. Lyubushkin, O. N. Soklakova, O. N. Ivanov, “Specific features of the transport properties of the Lu$_{0.1}$Bi$_{1.9}$Te$_{3}$ compound”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1031–1033 ; Semiconductors, 51:8 (2017), 989–991 |
| 8. |
M. N. Yapryntsev, R. A. Lyubushkin, O. N. Soklakova, O. N. Ivanov, “Synthesis and electrical properties of Bi$_{2}$Te$_{3}$-based thermoelectric materials doped with Er, Tm, Yb, and Lu”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 744–747 ; Semiconductors, 51:6 (2017), 710–713 |
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