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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 6, Pages 744–747
DOI: https://doi.org/10.21883/FTP.2017.06.44548.07
(Mi phts6126)
 

This article is cited in 3 scientific papers (total in 3 papers)

XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016

Synthesis and electrical properties of Bi$_{2}$Te$_{3}$-based thermoelectric materials doped with Er, Tm, Yb, and Lu

M. N. Yapryntsev, R. A. Lyubushkin, O. N. Soklakova, O. N. Ivanov

National Research University "Belgorod State University"
Full-text PDF (520 kB) Citations (3)
Abstract: Nanopowders of Bi$_{2}$Te$_{3}$ and R$_{0.1}$Bi$_{1.9}$Te$_{3}$ (where R = Er, Tm, Yb, Lu) are obtained by microwave solvothermal synthesis. The powder-like materials are compacted by cold isostatic compression followed by annealing in argon. The influence of the doping agent on the structure and characteristics of the derived materials are investigated. It is demonstrated that the introduction of rare-earth elements (2 at %) into the bismuth-telluride lattice leads to a decrease in the electrical resistivity and to an increase in the Seebeck coefficient. The best thermoelectric properties are obtained for the sample of bismuth telluride doped with thulium.
Received: 12.12.2016
Accepted: 19.12.2016
English version:
Semiconductors, 2017, Volume 51, Issue 6, Pages 710–713
DOI: https://doi.org/10.1134/S106378261706029X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. N. Yapryntsev, R. A. Lyubushkin, O. N. Soklakova, O. N. Ivanov, “Synthesis and electrical properties of Bi$_{2}$Te$_{3}$-based thermoelectric materials doped with Er, Tm, Yb, and Lu”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 744–747; Semiconductors, 51:6 (2017), 710–713
Citation in format AMSBIB
\Bibitem{YapLyuSok17}
\by M.~N.~Yapryntsev, R.~A.~Lyubushkin, O.~N.~Soklakova, O.~N.~Ivanov
\paper Synthesis and electrical properties of Bi$_{2}$Te$_{3}$-based thermoelectric materials doped with Er, Tm, Yb, and Lu
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 6
\pages 744--747
\mathnet{http://mi.mathnet.ru/phts6126}
\crossref{https://doi.org/10.21883/FTP.2017.06.44548.07}
\elib{https://elibrary.ru/item.asp?id=29404936}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 6
\pages 710--713
\crossref{https://doi.org/10.1134/S106378261706029X}
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  • https://www.mathnet.ru/eng/phts/v51/i6/p744
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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