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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
N. V. Sibirev, Yu. S. Berdnikov, V. V. Fedorov, I. V. Shtrom, A. D. Bolshakov, “Parameter-free model of self-catalyzed growth of Ga(As, P) nanowires”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 969–972 ; Semiconductors, 56:1 (2022), 14–17 |
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2020 |
2. |
N. V. Sibirev, Yu. S. Berdnikov, V. N. Sibirev, “Crystalline-phase switching in heterostructured Ga(AsP) nanowires under the impact of elastic strains”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1117–1121 ; Semiconductors, 54:10 (2020), 1320–1324 |
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2019 |
3. |
N. V. Sibirev, Yu. S. Berdnikov, V. N. Sibirev, “Impact of elastic stress on crystal phase of GaP nanowires”, Fizika Tverdogo Tela, 61:12 (2019), 2316 ; Phys. Solid State, 61:12 (2019), 2313–2315 |
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4. |
A. A. Koryakin, S. A. Kukushkin, N. V. Sibirev, “On the mechanism of the vapor–solid–solid growth of Au-catalyzed GaAs nanowires”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 370–380 ; Semiconductors, 53:3 (2019), 350–360 |
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5. |
N. V. Sibirev, Yu. S. Berdnikov, V. N. Sibirev, “The role of elastic stresses in the formation of nitride nanowires with cubic crystalline structure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 39–42 ; Tech. Phys. Lett., 45:10 (2019), 1050–1053 |
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6. |
N. R. Grigor'eva, I. V. Shtrom, R. V. Grigor'ev, I. P. Soshnikov, R. R. Reznik, Yu. B. Samsonenko, N. V. Sibirev, G. E. Cirlin, “The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019), 37–40 ; Tech. Phys. Lett., 45:8 (2019), 835–838 |
7. |
N. V. Sibirev, H. Huang, E. V. Ubyivovk, R. Lv, D. Zhao, Q. Guang, Yu. S. Berdnikov, X. Yan, A. A. Koryakin, I. V. Shtrom, “Growth of GaN nanotubes and nanowires on Au–Ni catalysts”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 38–41 ; Tech. Phys. Lett., 45:2 (2019), 159–162 |
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2018 |
8. |
V. V. Danilov, A. S. Kulagina, N. V. Sibirev, A. I. Khrebtov, V. B. Shilov, “Photodynamics of nonlinear effects of picosecond laser action on CdSe/ZnS QDs colloidal solutions”, Optics and Spectroscopy, 125:5 (2018), 658–663 ; Optics and Spectroscopy, 125:5 (2018), 716–721 |
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9. |
N. V. Sibirev, K. P. Kotlyar, A. A. Koryakin, I. V. Shtrom, E. V. Ubyivovk, I. P. Soshnikov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin, “Solar cell based on core/shell nanowires”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1464–1468 ; Semiconductors, 52:12 (2018), 1568–1572 |
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10. |
I. V. Shtrom, N. V. Sibirev, E. V. Ubyivovk, Yu. B. Samsonenko, A. I. Khrebtov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin, “GaP/Si(111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 5–9 ; Semiconductors, 52:1 (2018), 1–5 |
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2017 |
11. |
I. V. Shtrom, N. V. Sibirev, E. V. Ubyivovk, Yu. B. Samsonenko, A. I. Khrebtov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin, “GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1587 ; Semiconductors, 52:1 (2018), 1–5 |
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2016 |
12. |
N. V. Sibirev, A. A. Koryakin, V. G. Dubrovskii, “On a new method of heterojunction formation in III–V nanowires”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1592–1594 ; Semiconductors, 50:12 (2016), 1566–1568 |
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