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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 11, Pages 969–972
DOI: https://doi.org/10.21883/FTP.2021.11.51548.44 (Mi phts4929) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Parameter-free model of self-catalyzed growth of Ga(As, P) nanowires

N. V. Sibirevab, Yu. S. Berdnikovac, V. V. Fedorovb, I. V. Shtromad, A. D. Bolshakovab

a Saint Petersburg State University
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
c National Research University "Higher School of Economics", St. Petersburg Branch
d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
Full-text PDF (103 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2021.11.51548.44
Abstract: A precise model for calculating dependence of self-catalyzed Ga (As, P) nanowires composition on growth parameters without any fitting parameters is proposed. It is shown that the Ga(As, P) nanowires composition does not depend on the growth rate at a fixed ratio of group V and group III atoms total fluxes. The results of modeling are in good agreement with the experimentally observed dependence of the Ga(As, P) nanowires composition on the ratio of the fluxes of As and P atoms.
Keywords: Ga (As, P) nanowires, molecular beam epitaxy, quantitative calculation of composition.
Funding agency Grant number
Russian Science Foundation 20-72-10192
Saint Petersburg State University 75746688
Ministry of Education and Science of the Russian Federation
The fabrication of NW samples was supported by a grant of the Russian Science Foundation 20-72-10192. Diagnostics of the samples was carried out with the support of a grant from St. Petersburg University no. 75746688.
Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021
English version:
Semiconductors, 2022, Volume 56, Issue 1, Pages 14–17
DOI: https://doi.org/10.1134/S1063782622010134
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. V. Sibirev, Yu. S. Berdnikov, V. V. Fedorov, I. V. Shtrom, A. D. Bolshakov, “Parameter-free model of self-catalyzed growth of Ga(As, P) nanowires”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 969–972; Semiconductors, 56:1 (2022), 14–17
Citation in format AMSBIB
\Bibitem{SibBerFed21}
\by N.~V.~Sibirev, Yu.~S.~Berdnikov, V.~V.~Fedorov, I.~V.~Shtrom, A.~D.~Bolshakov
\paper Parameter-free model of self-catalyzed growth of Ga(As, P) nanowires
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 11
\pages 969--972
\mathnet{http://mi.mathnet.ru/phts4929}
\crossref{https://doi.org/10.21883/FTP.2021.11.51548.44}
\elib{https://elibrary.ru/item.asp?id=46668663}
\transl
\jour Semiconductors
\yr 2022
\vol 56
\issue 1
\pages 14--17
\crossref{https://doi.org/10.1134/S1063782622010134}
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  • https://www.mathnet.ru/eng/phts/v55/i11/p969
    • This publication is cited in the following 2 articles:
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