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Publications in Math-Net.Ru |
Citations |
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2021 |
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N. A. Sobolev, A. E. Kalyadin, O. V. Feklisova, E. B. Yakimov, “Effect of compressive and stretching strains on the dislocation luminescence spectrum in silicon”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 550–553   ; Semiconductors, 55:7 (2021), 633–636 |
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2019 |
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S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, V. I. Orlov, O. V. Feklisova, L. A. Pavlova, R. V. Presnyakov, “Dependence of the bulk electrical properties of multisilicon on the grain misorientation parameters”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 59–64 ; Semiconductors, 53:1 (2019), 55–59 |
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2018 |
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S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, L. A. Pavlova, O. V. Feklisova, R. V. Presnyakov, “Electrical activity of extended defects in multicrystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 266–271 ; Semiconductors, 52:2 (2018), 254–259 |
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