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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. A. Semakova, A. M. Smirnov, N. L. Bazhenov, K. J. Mynbaev, A. A. Pivovarova, A. V. Chernyaev, S. S. Kizhaev, N. D. Stoyanov, “Spectral and electrical properties of led heterostructures with InAs-based active layer”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 682–687   |
| 2. |
A. A. Semakova, N. L. Bazhenov, K. J. Mynbaev, A. V. Chernyaev, S. S. Kizhaev, N. D. Stoyanov, “Study of the current–voltage characteristics of InAsSb-based LED heterostructures in the 4.2–300 K temperature range”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 502–506 ; Semiconductors, 55:6 (2021), 557–561 |
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2020 |
| 3. |
A. A. Semakova, S. N. Lipnitskaya, K. J. Mynbaev, N. L. Bazhenov, S. S. Kizhaev, A. V. Chernyaev, N. D. Stoyanov, H. Lipsanen, “Experimental study and simulation of the spectral characteristics of LED heterostructures with an inas active region”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020), 51–54 ; Tech. Phys. Lett., 46:2 (2020), 150–153 |
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2017 |
| 4. |
K. J. Mynbaev, N. L. Bazhenov, A. A. Semakova, M. P. Mikhailova, N. D. Stoyanov, S. S. Kizhaev, S. S. Molchanov, A. P. Astakhova, A. V. Chernyaev, H. Lipsanen, V. E. Bugrov, “Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 247–252 ; Semiconductors, 51:2 (2017), 239–244 |
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