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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
N. A. Torkhov, “Room-temperature observation of local and nonlocal electronic quantum states on the surface of silicon”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 16–23   ; Semiconductors, 55:1 (2021), 14–20 |
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2020 |
| 2. |
N. A. Torkhov, A. A. Kokolov, L. I. Babak, “Influence of the surface morphology of the microwave microstrip line on its transmission performance”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1238–1243 ; Semiconductors, 54:11 (2020), 1472–1477 |
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| 3. |
N. A. Torkhov, V. À. Novikov, “Kelvin probe force microscopy study of the electrostatic system of the crystal surface of AuNi/GaN Schottky diodes”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 266–274 ; Semiconductors, 54:3 (2020), 337–344 |
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2019 |
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N. A. Torkhov, L. I. Babak, A. A. Kokolov, “On the application of Schottky contacts in the microwave, extremely high frequency, and THz ranges”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1697–1707 ; Semiconductors, 53:12 (2019), 1688–1698 |
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N. A. Torkhov, “Sheet resistance of the TiAlNiAu thin-film metallization of ohmic contacts to nitride semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 32–40 ; Semiconductors, 53:1 (2019), 28–36 |
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2018 |
| 6. |
N. A. Torkhov, “Impact of the periphery electrostatic field on the photovoltaic effect in metal–semiconductor contacts with a Schottky barrier”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1150–1171 ; Semiconductors, 52:10 (2018), 1269–1292 |
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