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Publications in Math-Net.Ru |
Citations |
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2021 |
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V. S. Evstigneev, A. V. Chilyasov, A. N. Moiseev, S. V. Morozov, D. I. Kuritsyn, “Arsenic doping upon the deposition of CdTe layers from dimethylcadmium and diisopropyltellurium”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 9–15   ; Semiconductors, 55:1 (2021), 7–13 |
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2018 |
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V. S. Evstigneev, V. S. Varavin, A. V. Chilyasov, V. G. Remesnik, A. N. Moiseev, B. S. Stepanov, “Electrophysical properties of $p$-type undoped and arsenic-doped Hg$_{1-x}$Cd$_{x}$Te epitaxial layers with $x\approx$ 0.4 grown by the MOCVD method”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 554–559 ; Semiconductors, 52:6 (2018), 702–707 |
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