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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
V. I. Vettegren, A. G. Kadomtsev, I. P. Shcherbakov, R. I. Mamalimov, G. A. Oganesyan, ““Nucleation” cracks on the surface of a silicon crystal”, Fizika Tverdogo Tela, 63:10 (2021), 1594–1597   ; Phys. Solid State, 63:12 (2021), 1847–1850 |
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2020 |
| 2. |
V. V. Emtsev, G. A. Oganesyan, “Towards the modeling of impurity-related defects in irradiated $n$-type germanium: a challenge to theory”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1188 ; Semiconductors, 54:11 (2020), 1388–1394 |
| 3. |
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, G. A. Oganesyan, D. S. Poloskin, “Vacancy-phosphorus complexes in electron-irradiated floating-zone $n$-type silicon: new points in annealing studies”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 45 ; Semiconductors, 54:1 (2020), 46–54 |
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2018 |
| 4. |
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, D. S. Poloskin, G. A. Oganesyan, “Interaction rates of group-III and group-V impurities with intrinsic point defects in irradiated Si and Ge”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1578 ; Semiconductors, 52:13 (2018), 1677–1685 |
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| 5. |
V. V. Emtsev, E. V. Gushchina, V. N. Petrov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, A. P. Kartashova, A. A. Zybin, V. V. Kozlovsky, M. F. Kudoyarov, A. V. Sakharov, G. A. Oganesyan, D. S. Poloskin, V. V. Lundin, “Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 804–811 ; Semiconductors, 52:7 (2018), 942–949 |
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2017 |
| 6. |
V. V. Emtsev, V. V. Kozlovski, D. S. Poloskin, G. A. Oganesyan, “Radiation-produced defects in germanium: experimental data and models of defects”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1632–1646 ; Semiconductors, 51:12 (2017), 1571–1587 |
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| 7. |
A. A. Lebedev, B. Ya. Ber, G. A. Oganesyan, S. V. Belov, S. P. Lebedev, I. P. Nikitina, N. V. Seredova, L. V. Shakhov, V. V. Kozlovsky, “Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1088–1090 ; Semiconductors, 51:8 (2017), 1044–1046 |
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2016 |
| 8. |
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovskii, G. A. Oganesyan, D. S. Poloskin, “Some challenging points in the identification of defects in floating-zone $n$-type silicon irradiated with 8 and 15 Mev protons”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1313–1319 ; Semiconductors, 50:10 (2016), 1291–1298 |
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| 9. |
V. V. Emtsev, E. E. Zavarin, M. A. Kozlovskii, M. F. Kudoyarov, V. V. Lundin, G. A. Oganesyan, V. N. Petrov, D. S. Poloskin, A. V. Sakharov, S. I. Troshkov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, V. V. Kozlovsky, “Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 39–46 ; Tech. Phys. Lett., 42:11 (2016), 1079–1082 |
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| 10. |
V. V. Emtsev, E. E. Zavarin, G. A. Oganesyan, V. N. Petrov, A. V. Sakharov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, “The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016), 80–86 ; Tech. Phys. Lett., 42:7 (2016), 701–703 |
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