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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. I. Popov, A. D. Barinov, V. M. Yemets, R. A. Kastro, A. V. Kolobov, A. A. Kononov, A. V. Ovcharov, T. S. Chukanova, “Effect of transition metals on the dielectric properties of diamond-like silicon-carbon films”, Fizika Tverdogo Tela, 63:11 (2021), 1844–1851   |
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| 2. |
R. A. Kastro-Arata, G. I. Grabko, A. A. Kononov, N. I. Anisimova, M. Krbal, A. V. Kolobov, “Charge transfer in thin layers of glassy Ge$_{28.5}$Pb$_{14.5}$Fe$_{0.5}$S$_{56.5}$”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 450–454 |
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2020 |
| 3. |
A. A. Kononov, R. A. Castro Arata, D. D. Glavnaya, V. M. Stozharov, D. M. Dolginsev, Yu. Saito, P. Fons, N. I. Anisimova, A. V. Kolobov, “Polarization processes in thin layers of amorphous MoS$_2$ obtained by RF magnetron sputtering”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 461–465 ; Semiconductors, 54:5 (2020), 558–562 |
| 4. |
R. A. Castro-Arata, V. M. Stozharov, D. M. Dolginsev, A. A. Kononov, Yu. Saito, P. Fons, J. Tominaga, N. I. Anisimova, A. V. Kolobov, “Structural and dielectric study of thin amorphous layers of the Ge–Sb–Te system prepared by RF magnetron sputtering”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 149–152 ; Semiconductors, 54:2 (2020), 201–204 |
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