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Publications in Math-Net.Ru |
Citations |
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2022 |
1. |
I. S. Shashkin, A. D. Rybkin, V. A. Kryuchkov, A. E. Kazakova, D. N. Romanovich, N. A. Rudova, S. O. Slipchenko, N. A. Pikhtin, “Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (<i>λ</i> = 1060 nm) with an ultra-wide emitting aperture (800 μm)”, Kvantovaya Elektronika, 52:9 (2022), 794–798 [Bull. Lebedev Physics Institute, 50:suppl. 1 (2023), S18–S24] |
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2021 |
2. |
N. A. Volkov, T. A. Bagaev, D. R. Sabitov, A. Yu. Andreev, I. V. Yarotskaya, A. A. Padalitsa, M. A. Ladugin, A. A. Marmalyuk, K. V. Bakhvalov, D. A. Veselov, A. V. Lyutetskiy, N. A. Rudova, V. A. Strelets, S. O. Slipchenko, N. A. Pikhtin, “InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics”, Kvantovaya Elektronika, 51:10 (2021), 905–908 [Quantum Electron., 51:10 (2021), 905–908 ] |
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2020 |
3. |
I. S. Shashkin, A. Yu. Leshko, D. N. Nikolaev, V. V. Shamakhov, D. A. Veselov, N. A. Rudova, K. V. Bakhvalov, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 414–419 ; Semiconductors, 54:4 (2020), 489–494 |
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4. |
I. S. Shashkin, A. Yu. Leshko, D. N. Nikolaev, V. V. Shamakhov, N. A. Rudova, K. V. Bakhvalov, A. V. Lyutetskiy, V. A. Kapitonov, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 408–413 |
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