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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
A. V. Antonov, A. I. Elkina, V. K. Vasil'ev, M. A. Galin, D. V. Masterov, A. N. Mikhaylov, S. V. Morozov, S. A. Pavlov, A. E. Parafin, D. I. Tetelbaum, S. S. Ustavshchikov, P. A. Yunin, D. A. Savinov, “Experimental observation of $s$-component of superconducting pairing in thin disordered HTSC films based on YBCO”, Fizika Tverdogo Tela, 62:9 (2020), 1434–1439   ; Phys. Solid State, 62:9 (2020), 1598–1603 |
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2016 |
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D. S. Korolev, A. N. Mikhaylov, A. I. Belov, V. K. Vasil'ev, D. V. Guseinov, E. V. Okulich, A. A. Shemukhin, S. I. Surodin, D. E. Nikolichev, A. V. Nezhdanov, A. V. Pirogov, D. A. Pavlov, D. I. Tetelbaum, “Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 274–278 ; Semiconductors, 50:2 (2016), 271–275 |
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1984 |
| 3. |
V. K. Vasil'ev, V. N. Novozhilov, P. V. Pavlov, “RESISTOMETRIC STUDY METHOD OF KINETICS OF ION-IMPLANTATION PROCESSES”, Zhurnal Tekhnicheskoi Fiziki, 54:11 (1984), 2263–2266 |
| 4. |
V. K. Vasil'ev, O. N. Gorshkov, Yu. A. Danilov, V. S. Tulovchikov, “Characteristic X-Ray Radiation Study
of Disturbances in Low-Lying Levels
in InSb Implanted Single Crystals”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 189–191 |
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