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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
L. A. Delimova, N. V. Zaitseva, V. V. Ratnikov, V. S. Yuferev, D. S. Seregin, K. A. Vorotilov, A. S. Sigov, “Comparison of characteristics of thin PZT films on Si-on-sapphire and Si substrates”, Fizika Tverdogo Tela, 63:8 (2021), 1076–1083   ; Phys. Solid State, 63:8 (2021), 1145–1152 |
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| 2. |
L. M. Sorokin, R. N. Kyutt, V. V. Ratnikov, A. E. Kalmykov, “Structural characterization of a short-period superlattice based on the CdF$_{2}$/CaF$_{2}$/Si(111) heterostructure by transmission electron microscopy and X-ray diffractometry”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 3–6 ; Tech. Phys. Lett., 47:12 (2021), 893–896 |
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2020 |
| 3. |
A. V. Myasoedov, D. V. Nechaev, V. V. Ratnikov, A. E. Kalmykov, L. M. Sorokin, V. N. Zhmerik, “An increase of threading dislocations filtering efficiency in AlN/$c$-Al$_{2}$O$_{3}$ templates with faceted surface morphology during a growth by molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 26–30 ; Tech. Phys. Lett., 46:6 (2020), 543–547 |
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| 4. |
V. V. Ratnikov, D. V. Nechaev, A. V. Myasoedov, O. A. Koshelev, V. N. Zhmerik, “Decreasing density of grown-in dislocations in AlN/$c$-sapphire templates grown by plasma-activated molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020), 36–39 ; Tech. Phys. Lett., 46:4 (2020), 389–392 |
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2018 |
| 5. |
T. V. Malin, D. S. Milakhin, V. G. Mansurov, Yu. G. Galitsyn, A. S. Kozhukhov, V. V. Ratnikov, A. N. Smirnov, V. Yu. Davydov, K. S. Zhuravlev, “Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 643–650 ; Semiconductors, 52:6 (2018), 789–796 |
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| 6. |
V. V. Ratnikov, M. P. Scheglov, B. Ya. Ber, D. Yu. Kazantsev, I. V. Osinnykh, T. V. Malin, K. S. Zhuravlev, “Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 233–237 ; Semiconductors, 52:2 (2018), 221–225 |
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2016 |
| 7. |
V. V. Ratnikov, D. V. Nechaev, V. N. Zhmerik, S. V. Ivanov, “X-ray diffractometry of AlN/$c$-sapphire templates obtained by plasma-activated molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016), 61–69 ; Tech. Phys. Lett., 42:4 (2016), 419–422 |
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1986 |
| 8. |
V. V. Ratnikov, L. M. Sorokin, G. N. Mosina, “Diffuse x-ray scattering from defects in germanium-lithium single crystals”, Fizika Tverdogo Tela, 28:12 (1986), 3734–3736 |
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1985 |
| 9. |
R. N. Kyutt, V. V. Ratnikov, “MEASUREMENT OF ANGULAR-DISTRIBUTIONS OF THE X-RAY DIFFUSE-SCATTERING ON
THE TRIPLE CRYSTAL DIFFRACTOMETER WITH LAUE-CASE DIFFRACTIONS”, Zhurnal Tekhnicheskoi Fiziki, 55:2 (1985), 391–393 |
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1984 |
| 10. |
V. V. Ratnikov, L. M. Sorokin, “Experimental observation of dynamical effects at X-ray diffuse scattering”, Fizika Tverdogo Tela, 26:11 (1984), 3445–3447 |
| 11. |
V. V. Ratnikov, È. K. Kov'ev, L. M. Sorokin, “Diffusion scattering distribution near Bragg reflections and its peculiarities at X-ray-diffraction by $\mathrm{Ge}$ single crystals doped with $\mathrm{As}$”, Fizika Tverdogo Tela, 26:7 (1984), 2155–2158 |
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