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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
S. I. Rembeza, S. A. Belousov, N. N. Kosheleva, E. S. Rembeza, T. V. Svistova, E. Suvaci, E. Özel, G. Tuncolu, C. Açiksari, “Amorphous films of ternary zinc and tin oxides for transparent electronics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018), 73–80   ; Tech. Phys. Lett., 44:11 (2018), 984–987 |
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1990 |
| 2. |
A. I. Plotnikov, V. A. Loginov, S. I. Rembeza, “STUDY OF FUSION AND CRYSTALLIZATION OF ION-IMPLANTED SILICON EFFECTED BY
POWERFUL NONCOHERENT EMISSION”, Zhurnal Tekhnicheskoi Fiziki, 60:12 (1990), 131–134 |
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1989 |
| 3. |
A. I. Plotnikov, S. I. Rembeza, V. A. Loginov, A. P. Dorofeev, “LOCAL SURFACE MELTING OF ION-IMPLANTED SILICON”, Zhurnal Tekhnicheskoi Fiziki, 59:11 (1989), 181–183 |
| 4. |
A. A. Lebedev, V. I. Mitrokhin, S. I. Rembeza, V. V. Sviridov, M. N. Stepanova, N. P. Yaroslavtsev, “Электронно-механический резонанс на глубоких центрах
в $p^{+}{-}p^{0}{-}\pi{-}n^{0}$-структурах арсенида галлия”, Fizika i Tekhnika Poluprovodnikov, 23:5 (1989), 897–899 |
| 5. |
V. A. Loginov, A. I. Plotnikov, S. I. Rembeza, “CONTROL OF PERIOD OF SURFACE RELIEF OF CONDENSED MEDIA”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:14 (1989), 48–52 |
| 6. |
A. I. Plotnikov, S. I. Rembeza, V. A. Loginov, “FORMATION OF SURFACE PERIODIC STRUCTURES UNDER THE NONCOHERENT EMISSION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:10 (1989), 55–59 |
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1988 |
| 7. |
Y. V. Zakharov, D. I. Materikin, N. N. Pribylov, L. P. Bordyuzha, S. I. Rembeza, “Эффекты электрон-фононного взаимодействия в примесной
фотопроводимости $n\text{-GaP}\langle\text{Ni}\rangle$”, Fizika i Tekhnika Poluprovodnikov, 22:3 (1988), 485–488 |
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1987 |
| 8. |
O. G. Kutukova, V. I. Mitrokhin, S. I. Rembeza, N. P. Yaroslavtsev, “Observation of Electron-Mechanical Resonance on Deep Levels in A$^{\text{III}}$B$^{\text{V}}$ Semiconductors Implanted by
Iron Ions”, Fizika i Tekhnika Poluprovodnikov, 21:7 (1987), 1335–1336 |
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1986 |
| 9. |
V. I. Mitrokhin, S. I. Rembeza, V. V. Sviridov, N. P. Yaroslavtsev, “Dielectric Relaxation Related with Deep Levels in High-Resistance Semiconductors”, Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2230–2233 |
| 10. |
V. A. Loginov, N. M. Medvedev, V. I. Mitrokhin, S. I. Rembeza, N. P. Yaroslavtsev, “Internal Friction in A$^{\text{III}}$B$^{\text{V}}$ Semiconductors Implanted by Boron Ions”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 913–915 |
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1985 |
| 11. |
V. I. Mitrokhin, S. I. Rembeza, V. V. Sviridov, N. P. Yaroslavtsev, “Internal friction due to deep levels in polar semiconductors”, Fizika Tverdogo Tela, 27:7 (1985), 2081–2085 |
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1984 |
| 12. |
V. I. Mitrokhin, S. I. Rembeza, N. P. Yaroslavtsev, “Internal friction in semi-insulated $\mathrm{GaAs}$”, Fizika Tverdogo Tela, 26:7 (1984), 2228–2229 |
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1983 |
| 13. |
L. P. Bordyuzha, D. I. Materikin, V. S. Postnikov, S. I. Rembeza, “Many-phonon light absorption by deep charged impurity centers”, Fizika Tverdogo Tela, 25:9 (1983), 2787–2789 |
| 14. |
V. I. Kirillov, N. N. Pribylov, S. I. Rembeza, A. I. Spirin, V. V. Teslenko, “Состояние примесных атомов
Сr и Со в GaP”, Fizika i Tekhnika Poluprovodnikov, 17:6 (1983), 1149–1151 |
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