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This article is cited in 4 scientific papers (total in 4 papers)
Amorphous films of ternary zinc and tin oxides for transparent electronics
S. I. Rembezaa, S. A. Belousova, N. N. Koshelevaa, E. S. Rembezaa, T. V. Svistovaa, E. Suvacib, E. Özelb, G. Tuncolub, C. Açiksarib a Voronezh State Technical University
b Anadolu University, Eskişehir, Turkey
Abstract:
Amorphous films of two varieties of zinc stannate (ZnSnO$_{3}$ и Zn$_{2}$SnO$_{4}$) have been considered that were fabricated by radio-frequency sputtering of ceramic compound targets containing ZnO and SnO$_2$ in 1: 1 and 2: 1 ratios. The elemental and phase compositions of the films and their optical and electrical parameters were determined. The transparency of the films in the visible spectral range is on average 87%. Zinc stannate amorphous films have a high electrical conductivity in contrast to amorphous ZnO and SnO$_2$. This phenomenon, which makes it possible to use zinc stannate amorphous films in transparent and flexible electronics, is explained.
Received: 13.09.2017
Citation:
S. I. Rembeza, S. A. Belousov, N. N. Kosheleva, E. S. Rembeza, T. V. Svistova, E. Suvaci, E. Özel, G. Tuncolu, C. Açiksari, “Amorphous films of ternary zinc and tin oxides for transparent electronics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018), 73–80; Tech. Phys. Lett., 44:11 (2018), 984–987
Linking options:
https://www.mathnet.ru/eng/pjtf5654 https://www.mathnet.ru/eng/pjtf/v44/i21/p73
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