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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts, N. A. Kalyuzhnyy, “Increasing the efficiency of triple-junction solar cells due to the metamorphic InGaAs subcell”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 51–54   |
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2020 |
| 2. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, A. M. Nadtochiy, R. A. Salii, M. Z. Shvarts, N. A. Kalyuzhnyy, “The influence of the number of rows of GaInAs quantum objects on the saturation current of GaAs photoconverters”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:12 (2020), 30–33 ; Tech. Phys. Lett., 46:6 (2020), 599–602 |
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| 3. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. Z. Shvarts, N. A. Kalyuzhnyy, “Finding the energy gap of Ga$_{1-x}$In$_{x}$As $p$–$n$ junctions on a metamorphic buffer from the photocurrent spectrum”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020), 29–31 ; Tech. Phys. Lett., 46:4 (2020), 332–334 |
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2019 |
| 4. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. Z. Shvarts, N. A. Kalyuzhnyy, “Counteracting the photovoltaic effect in the top intergenerator part of GaInP/GaAs/Ge solar cells”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1568–1572 ; Semiconductors, 53:11 (2019), 1535–1539 |
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| 5. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. Z. Shvarts, N. A. Kalyuzhnyy, “Anomalies in photovoltaic characteristics of multijunction solar cells at ultrahigh solar light concentrations”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 37–39 ; Tech. Phys. Lett., 45:11 (2019), 1100–1102 |
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2018 |
| 6. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, R. A. Salii, M. Z. Shvarts, N. A. Kalyuzhnyy, “Recombination in GaAs $p$-$i$-$n$ structures with InGaAs quantum-confined objects: modeling and regularities”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1126–1130 ; Semiconductors, 52:10 (2018), 1244–1248 |
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2016 |
| 7. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, N. Kh. Timoshina, M. Z. Shvarts, N. A. Kalyuzhnyy, “On current spreading in solar cells: a two-parameter tube model”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 987–992 ; Semiconductors, 50:7 (2016), 970–975 |
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1992 |
| 8. |
V. V. Evstropov, I. Y. Linkov, Ya. V. Morozenko, F. G. Pikus, “Фотолюминесценция компенсированного SiC-6H”, Fizika i Tekhnika Poluprovodnikov, 26:6 (1992), 969–978 |
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1991 |
| 9. |
K. K. Dzhamanbalin, A. G. Dmitriev, V. V. Evstropov, M. I. Shulga, “Возникновение туннельного тока в структурах металл$-$полупроводник
после воздействия лазерного излучения”, Fizika i Tekhnika Poluprovodnikov, 25:10 (1991), 1774–1779 |
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1989 |
| 10. |
M. M. Anikin, V. V. Evstropov, I. V. Popov, A. M. Strel'chuk, A. L. Syrkin, “Разновидность неклассического термоинжекционного тока
в карбид-кремниевых $p{-}n$-структурах”, Fizika i Tekhnika Poluprovodnikov, 23:10 (1989), 1813–1818 |
| 11. |
M. M. Anikin, V. V. Evstropov, I. V. Popov, V. N. Rastegaev, A. M. Strel'chuk, A. L. Syrkin, “Неклассический термоинжекционный ток в карбид-кремниевых
$p{-}n$-структурах”, Fizika i Tekhnika Poluprovodnikov, 23:4 (1989), 647–651 |
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1986 |
| 12. |
G. T. Aitieva, V. N. Bessolov, A. S. Volkov, V. V. Evstropov, K. V. Kiselev, G. G. Kochiev, A. L. Lipko, B. V. Tsarenkov, “Interface Luminescence of $n$-GaAs/$n$-GaAlAs Heterostructure Produced by Liquid Epitaxy”, Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1313–1317 |
| 13. |
V. V. Evstropov, N. M. Stus, N. Smirnova, G. M. Filaretova, L. M. Fedorov, V. G. Sidorov, “Nonclassical Thermoinjection Current in InAsSbP/lnAs $p{-}n$ Structures”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 762–765 |
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1984 |
| 14. |
A. T. Gorelenok, V. G. Gruzdov, V. V. Evstropov, V. G. Sidorov, I. S. Tarasov, L. M. Fedorov, “Обратные токи в $p{-}n$-гетероструктурах
InGaAsP/InP”, Fizika i Tekhnika Poluprovodnikov, 18:11 (1984), 2036–2040 |
| 15. |
V. V. Evstropov, K. V. Kiselev, I. L. Petrovich, B. V. Tsarenkov, “Ток, обусловленный рекомбинацией через многоуровневый центр в слое
объемного заряда $p{-}n$-структуры”, Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1852–1858 |
| 16. |
A. T. Gorelenok, V. G. Gruzdov, V. V. Evstropov, V. G. Sidorov, I. S. Tarasov, L. M. Fedorov, “Влияние несоответствия параметров решеток на
$I{-}V$-характеристики InGaAsP/InP $p{-}n$-гетероструктур”, Fizika i Tekhnika Poluprovodnikov, 18:8 (1984), 1413–1416 |
| 17. |
A. T. Gorelenok, V. G. Gruzdov, V. V. Evstropov, V. G. Sidorov, I. S. Tarasov, L. M. Fedorov, “Tunnel-Type Currents in InGaAsP/InP $p{-}n$ Heterostructures”, Fizika i Tekhnika Poluprovodnikov, 18:6 (1984), 1034–1038 |
| 18. |
V. V. Evstropov, K. V. Kiselev, I. L. Petrovich, B. V. Tsarenkov, “Rate of Recombination via Multilevel (Multiply Charged) Center”, Fizika i Tekhnika Poluprovodnikov, 18:5 (1984), 902–912 |
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1983 |
| 19. |
V. V. Evstropov, И. N. Kalinin, B. V. Tsarenkov, “Неклассический термоинжекционный ток в GaP $p{-}n$-структурах”, Fizika i Tekhnika Poluprovodnikov, 17:4 (1983), 599–606 |
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