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Publications in Math-Net.Ru |
Citations |
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2016 |
| 1. |
V. V. Lundin, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, A. V. Sakharov, M. A. Sinicin, B. Ya. Ber, D. Yu. Kazantsev, A. F. Tsatsul'nikov, “Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 85–91   ; Tech. Phys. Lett., 42:5 (2016), 539–542 |
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1991 |
| 2. |
D. A. Vinokurov, V. M. Lantratov, M. A. Sinicin, V. P. Ulin, N. N. Faleev, O. M. Fedorova, Ya. L. Shaiovich, B. S. Yavich, “Свойства и особенности кристаллизации эпитаксиальных слоев GaAs,
выращенных на подложках Si(100) методом двухстадийного осаждения в МОС
гидридном процессе”, Fizika i Tekhnika Poluprovodnikov, 25:6 (1991), 1022–1029 |
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1989 |
| 3. |
S. G. Konnikov, O. V. Salata, V. A. Solovev, M. A. Sinicin, V. E. Umanskii, D. A. Vinokurov, “Определение электрофизических параметров тонких гетероэпитаксиальных
слоев в растровом электронном микроскопе (эксперимент)”, Fizika i Tekhnika Poluprovodnikov, 23:8 (1989), 1416–1419 |
| 4. |
D. Z. Garbuzov, S. N. Zhigulin, I. A. Mokina, T. A. Nalet, M. A. Sinicin, N. A. Strugov, A. P. Shkurko, B. S. Yavich, “OXIDE-BAND AND OVERGROWN ALGAAS/GAAS QUANTUM-DIMENSIONAL LASERS,
MANUFACTURED BY THE MOC-HYDRIDE EPITAXY METHOD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:1 (1989), 20–25 |
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1988 |
| 5. |
Z. I. Alferov, D. Z. Garbuzov, S. N. Zhigulin, I. A. Kuzmin, B. B. Orlov, M. A. Sinicin, N. A. Strugov, V. E. Tokranov, B. S. Yavich, “Квантово-размерные лазерные AlGaAs/GaAs-гетероструктуры, полученные
МОС гидридным методом. Квантовый выход люминесценции и пороги генерации”, Fizika i Tekhnika Poluprovodnikov, 22:12 (1988), 2111–2117 |
| 6. |
A. G. Mashevskii, M. A. Sinicin, D. R. Stroganov, O. M. Fedorova, B. S. Yavich, “FLUCTUATIONS OF A WIDTH OF QUANTUM WELLS AND LOW-TEMPERATURE
PHOTOLUMINESCENCE OF GAAS/ALGAAS QUANTUM-DIMENSIONAL STRUCTURES,
OBTAINED BY THE MOS-HYDRIDE METHOD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:13 (1988), 1217–1220 |
| 7. |
O. V. Kovalenkov, A. G. Mashevskii, M. A. Sinicin, O. M. Fedorova, B. S. Yavich, “STUDY OF GAAS-ALGAAS QUANTUM-DIMENSIONAL STRUCTURES, OBTAINED BY THE
MOS-HYDRIDE METHOD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988), 222–226 |
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1987 |
| 8. |
N. D. Il'inskaya, S. A. Nikishin, M. A. Sinicin, D. V. Sinyavskii, L. P. Sorokina, B. S. Yavich, “CURRENT CONTROL BY CROSS-SECTIONS OF THE THICKNESS AND CURRENT
DEOXIDATION OF LAYERS OF ALGAAS CULTIVATED IN GROOVES”, Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987), 778–782 |
| 9. |
S. G. Konnikov, O. V. Kovalenkov, K. Yu. Pogrebickii, M. A. Sinicin, N. N. Faleev, L. I. Flaks, B. S. Yavich, “Roentgen-Diffractional and Roentgen-Photoelectronic Measurements of the Parameters of Periodic GaAs–AlGaAs Structures
Produced by MOC Hydride Method”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1745–1749 |
| 10. |
S. G. Konnikov, A. G. Mashevskii, M. A. Sinicin, M. M. Sobolev, B. S. Yavich, “Mechanism of Photocurrent Amplification in GaAs–AlGaAs Structures”, Fizika i Tekhnika Poluprovodnikov, 21:7 (1987), 1327–1329 |
| 11. |
A. G. Mashevskii, M. A. Sinicin, O. M. Fedorova, B. S. Yavich, “Effect of Doping Level on Electrophysical Properties of Al$_{0.3}$Ga$_{0.7}$As : Si Solid
Solution”, Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 754–756 |
| 12. |
S. N. Aleksandrov, M. G. Ivanov, M. I. Nemenov, B. S. Rivkin, M. A. Sinicin, B. S. Yavich, “$N$-Type Current–Voltage Characteristic under Electroabsorption in a Double Heterostructure”, Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 703–706 |
| 13. |
Z. I. Alferov, O. A. Mezrin, M. A. Sinicin, S. I. Troshkov, B. S. Yavich, “Mechanism of the $S$-Type Current-Voltage Characteristic in a Multilayer Isotype GaAs$-$AlGaAs Heterostructure”, Fizika i Tekhnika Poluprovodnikov, 21:3 (1987), 494–499 |
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1986 |
| 14. |
B. Ya. Ber, L. А. Kadinskiy, M. A. Sinicin, V. S. Yuferev, B. S. Yavich, “ANALYSIS OF NONSTATIONARY PHENOMENA IN THE REACTOR VOLUME DURING THE
AL-GA-AS STRUCTURE GROWING PROCESS WITH SHARP MOC HETEROTRANSITIONS BY
THE HYDRIDE METHOD”, Zhurnal Tekhnicheskoi Fiziki, 56:2 (1986), 361–366 |
| 15. |
A. D. Zorin, E. N. Karataev, A. G. Mashevskii, M. A. Sinicin, O. M. Fedorova, “Study of the Nature of Acceptor Impurities in Pure GaAs Epitaxial Layers Produced by the MOC Hydride Method”, Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2163–2168 |
| 16. |
A. G. Mashevskii, M. A. Sinicin, O. M. Fedorova, ByuSyuYavich, “Deep Donor Level of Si in Al$_{x}$Ga$_{1-x}$As Solid Solutions Produced from a Gas Phase”, Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1919–1921 |
| 17. |
Zh. I. Alferov, S. A. Gurevich, R. V. Markova, V. M. Marahonov, S. A. Nikishin, E. L. Portnoĭ, M. A. Sinicin, D. V. Sinyavskii, F. N. Timofeev, A. E. Fedorovich, B. S. Yavich, “Continuous single-mode injection $Ga\,Al\,As$ heterolasers, obtained by gasophase and liquid-phase epitaxial hybrid technology”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:10 (1986), 577–582 |
| 18. |
A. I. Zhmakin, I. P. Ipatova, Yu. N. Makarov, M. A. Sinicin, A. A. Fursenko, B. S. Yavich, “Investigation of factors, determining the thickness homogeneity of gallium-arsenide epitaxial layers in the $Ga(CH_{3})_{3}-As\,H_{3}-H_{2}$ system”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:8 (1986), 506–509 |
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1985 |
| 19. |
A. G. Mashevskii, M. A. Sinicin, O. M. Fedorova, B. S. Yavich, “Investigation of multi-layered $Ga\,As-Al\,Ga\,As$ structures on inclined cross-sections, made by the chemical etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985), 21–24 |
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1984 |
| 20. |
R. S. Vartanyan, A. G. Mashevskii, M. A. Sinicin, V. P. Ulin, B. S. Yavich, A. A. Yakovenko, “Электрофизические характеристики метастабильных твердых растворов
(Ge$_{2}$)$_{x}$(GaAs)$_{1-x}$ и влияние на них термообработки”, Fizika i Tekhnika Poluprovodnikov, 18:8 (1984), 1438–1445 |
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