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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
P. V. Seredin, A. S. Len'shin, Abduljabbar Riyad Khuder, D. L. Goloshchapov, M. A. Kharajidi, I. N. Arsent'ev, I. A. Kasatkin, “Properties of compliant porous silicon-based substrates formed by two-stage etching”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1021–1026   |
| 2. |
P. V. Seredin, K. A. Barkov, D. L. Goloshchapov, A. S. Len'shin, Yu. Yu. Khudyakov, I. N. Arsent'ev, A. A. Lebedev, Sh. Sh. Sharofidinov, A. M. Mizerov, I. A. Kasatkin, T. Prutskij, “Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 704–710 ; Semiconductors, 55:12 (2021), 995–1001 |
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2020 |
| 3. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, Yu. Yu. Khudyakov, A. M. Mizerov, S. N. Timoshnev, I. N. Arsent'ev, A. N. Beltyukov, Harald Leiste, S. A. Kukushkin, “Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 491–503 ; Semiconductors, 54:5 (2020), 596–608 |
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| 4. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, I. N. Arsent'ev, S. A. Kukushkin, “Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 346–354 ; Semiconductors, 54:4 (2020), 417–425 |
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2019 |
| 5. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, I. N. Arsent'ev, Harald Leiste, Monika Rinke, “Structural and morphological properties of hybrid heterostructures based on gan grown on a compliant por-Si(111) substrate”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1141–1151 ; Semiconductors, 53:8 (2019), 1120–1130 |
| 6. |
P. V. Seredin, A. S. Len'shin, D. S. Zolotukhin, D. L. Goloshchapov, A. M. Mizerov, I. N. Arsent'ev, A. N. Beltyukov, “Comprehensive study of the nanoporous si layer influence on atomic and electron structure and optical properties of A$^{\mathrm{III}}$N/por-Si heterostructures grown by plasma assisted molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 1010–1016 ; Semiconductors, 53:7 (2019), 993–999 |
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| 7. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. N. Lukin, A. M. Mizerov, E. V. Nikitina, I. N. Arsent'ev, Harald Leiste, Monika Rinke, “Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 70–76 ; Semiconductors, 53:1 (2019), 65–71 |
| 8. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, I. N. Arsent'ev, H. Leiste, M. Rinke, “Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures”, Kvantovaya Elektronika, 49:6 (2019), 545–551 [Quantum Electron., 49:6 (2019), 545–551   ] |
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2018 |
| 9. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, M. A. Kondrashin, A. S. Len'shin, Yu. Yu. Khudyakov, A. M. Mizerov, I. N. Arsent'ev, A. N. Beltyukov, Harald Leiste, M. Rinke, “Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1553–1562 ; Semiconductors, 52:13 (2018), 1653–1661 |
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| 10. |
P. V. Seredin, A. S. Len'shin, A. V. Fedyukin, D. L. Goloshchapov, A. N. Lukin, I. N. Arsent'ev, A. V. Zhabotinsky, “Effect of conditions of electrochemical etching on the morphological, structural, and optical properties of porous gallium arsenide”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1041–1048 ; Semiconductors, 52:9 (2018), 1163–1170 |
| 11. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. N. Lukin, Yu. Yu. Khudyakov, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, N. A. Pikhtin, “Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 881–890 ; Semiconductors, 52:8 (2018), 1012–1021 |
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| 12. |
A. S. Len'shin, “Specific features of the optical characteristics of porous silicon and their modification by chemical treatment of the surface”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 342–348 ; Semiconductors, 52:3 (2018), 324–330 |
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| 13. |
P. V. Seredin, A. S. Len'shin, A. V. Fedyukin, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, Harald Leiste, Monika Rinke, “Influence of substrate misorientation on the composition and the structural and photoluminescence properties of epitaxial layers grown on GaAs(100)”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 118–124 ; Semiconductors, 52:1 (2018), 112–117 |
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2017 |
| 14. |
A. S. Len'shin, V. M. Kashkarov, È. P. Domashevskaya, P. V. Seredin, A. N. Beltyukov, F. Z. Gilmutdinov, “Composition of nanocomposites of thin tin layers on porous silicon, formed by magnetron sputtering”, Fizika Tverdogo Tela, 59:4 (2017), 773–782 ; Phys. Solid State, 59:4 (2017), 791–800 |
| 15. |
P. V. Seredin, D. L. Goloshchapov, A. S. Len'shin, A. N. Lukin, Yu. Yu. Khudyakov, I. N. Arsent'ev, T. Prutskij, “Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P on their optical properties”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1160–1167 ; Semiconductors, 51:9 (2017), 1111–1118 |
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| 16. |
P. V. Seredin, A. S. Len'shin, Yu. Yu. Khudyakov, I. N. Arsent'ev, N. A. Kalyuzhnyy, S. A. Mintairov, D. N. Nikolaev, T. Prutskij, “Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P alloys on their structural and morphological properties”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1131–1137 ; Semiconductors, 51:8 (2017), 1087–1092 |
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| 17. |
A. S. Len'shin, P. V. Seredin, I. V. Kavetskaya, D. A. Minakov, V. M. Kashkarov, “Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 193–197 ; Semiconductors, 51:2 (2017), 184–188 |
| 18. |
P. V. Seredin, A. S. Len'shin, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, I. S. Tarasov, V. V. Shamakhov, Tatiana Prutskij, Harald Leiste, Monika Rinke, “Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 124–132 ; Semiconductors, 51:1 (2017), 122–130 |
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2016 |
| 19. |
P. V. Seredin, D. A. Goloshchapov, A. S. Len'shin, A. N. Lukin, A. V. Fedyukin, I. N. Arsent'ev, A. D. Bondarev, Ya. V. Lubyanskiy, I. S. Tarasov, “Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1283–1294 ; Semiconductors, 50:9 (2016), 1261–1272 |
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