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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, Yu. Yu. Khudyakov, A. M. Mizerov, S. N. Timoshnev, I. N. Arsent'ev, A. N. Beltyukov, Harald Leiste, S. A. Kukushkin, “Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 491–503   ; Semiconductors, 54:5 (2020), 596–608 |
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| 2. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, I. N. Arsent'ev, S. A. Kukushkin, “Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 346–354 ; Semiconductors, 54:4 (2020), 417–425 |
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2019 |
| 3. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, I. N. Arsent'ev, Harald Leiste, Monika Rinke, “Structural and morphological properties of hybrid heterostructures based on gan grown on a compliant por-Si(111) substrate”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1141–1151 ; Semiconductors, 53:8 (2019), 1120–1130 |
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P. V. Seredin, A. S. Len'shin, D. S. Zolotukhin, D. L. Goloshchapov, A. M. Mizerov, I. N. Arsent'ev, A. N. Beltyukov, “Comprehensive study of the nanoporous si layer influence on atomic and electron structure and optical properties of A$^{\mathrm{III}}$N/por-Si heterostructures grown by plasma assisted molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 1010–1016 ; Semiconductors, 53:7 (2019), 993–999 |
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P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. N. Lukin, A. M. Mizerov, E. V. Nikitina, I. N. Arsent'ev, Harald Leiste, Monika Rinke, “Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 70–76 ; Semiconductors, 53:1 (2019), 65–71 |
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P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, I. N. Arsent'ev, H. Leiste, M. Rinke, “Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures”, Kvantovaya Elektronika, 49:6 (2019), 545–551 [Quantum Electron., 49:6 (2019), 545–551   ] |
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2018 |
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P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, M. A. Kondrashin, A. S. Len'shin, Yu. Yu. Khudyakov, A. M. Mizerov, I. N. Arsent'ev, A. N. Beltyukov, Harald Leiste, M. Rinke, “Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1553–1562 ; Semiconductors, 52:13 (2018), 1653–1661 |
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| 8. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. N. Lukin, Yu. Yu. Khudyakov, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, N. A. Pikhtin, “Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 881–890 ; Semiconductors, 52:8 (2018), 1012–1021 |
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