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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Features of optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N:Si-structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 39–42   ; Tech. Phys. Lett., 47:9 (2021), 692–695 |
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2019 |
| 2. |
P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N : Si structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:18 (2019), 48–51 ; Tech. Phys. Lett., 45:9 (2019), 951–954 |
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2018 |
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V. V. Ratnikov, M. P. Scheglov, B. Ya. Ber, D. Yu. Kazantsev, I. V. Osinnykh, T. V. Malin, K. S. Zhuravlev, “Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 233–237 ; Semiconductors, 52:2 (2018), 221–225 |
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P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Amplified luminescence of heavily doped Al<sub>x</sub>Ga<sub>1-x</sub>N structures under optical pumping”, Kvantovaya Elektronika, 48:3 (2018), 215–221 [Quantum Electron., 48:3 (2018), 215–221   ] |
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2017 |
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P. A. Bokhan, K. S. Zhuravlev, Dm. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Radiation enhancement in doped AlGaN-structures upon optical pumping”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017), 5–13 ; Tech. Phys. Lett., 43:1 (2017), 46–49 |
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