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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Fraiman, Yu. M. Mikhailov, “Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions”, Tech. Phys., 66:2 (2021), 367   |
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2019 |
| 2. |
G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Freiman, Yu. M. Mikhailov, “Effect of conductivity type and doping level of silicon crystals on the size of formed pore channels during anodic etching in hydrofluoric acid solutions”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1575–1584  ; Tech. Phys., 64:10 (2019), 1492–1500 |
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| 3. |
G. G. Savenkov, A. G. Zegrya, G. G. Zegrya, B. V. Rumyantsev, A. B. Sinani, Yu. M. Mikhailov, “The possibilities of energy-saturated nanoporous silicon-based composites (review and new results)”, Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019), 397–403 ; Tech. Phys., 64:3 (2019), 361–367 |
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| 4. |
A. G. Zegrya, V. V. Sokolov, G. G. Zegrya, Yu. V. Ganin, Yu. M. Mikhailov, “The effect of the doping level of starting silicon single crystals on structural parameters of porous silicon produced by electrochemical etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 3–6 ; Tech. Phys. Lett., 45:11 (2019), 1067–1070 |
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2017 |
| 5. |
G. G. Zegrya, G. G. Savenkov, V. A. Morozov, A. G. Zegrya, N. V. Ulin, V. P. Ulin, A. A. Lukin, V. A. Bragin, I. A. Oskin, Yu. M. Mikhailov, “Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 501–506 ; Semiconductors, 51:4 (2017), 477–482 |
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2016 |
| 6. |
A. F. Andreev, A. V. Gaponov-Grekhov, S. S. Gershtein, V. E. Zakharov, L. M. Zelenyi, G. A. Mesyats, Yu. M. Mikhailov, V. A. Rubakov, O. V. Rudenko, V. A. Sadovnichii, I. M. Khalatnikov, A. E. Sheindlin, I. A. Shcherbakov, “Vladimir Evgen'evich Fortov (on his 70th birthday)”, UFN, 186:1 (2016), 109–110 ; Phys. Usp., 59:1 (2016), 100–102  |
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