Persons: Smirnova, Irina Alekseevna

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Smirnova, Irina Alekseevna

Candidate of physico-mathematical sciences

Speciality:

01.04.07 (Physics of condensed states)

Keywords:

Defects of crystal structure, the physicist of diffraction of X-rays, x-ray topography, x-ray optics, difraction contrast of defects

Main publications:

1. Smirnova I.A., E.V.Suvorov, E.V.Shulakov Difraktsiya rentgenovskogo izlucheniya na odnorodno izognutom kristalla v geometrii na otrazhenie FTT 2011, tom 53, vyp. 1, str.35-40
2. Suvorov E.V., I.A.Smirnova Difraktsionnoe izobrazhenie vintovykh dislokatsii v metodakh rentgenovskoi sektsionnoi topografii Poverkhnost, #12, (2011), s.1-4
3. Suvorov E.V., Metody issledovaniya realnoi struktury i sostava materialov. Moskva, Izdatelskii dom MISiS, 2011, -163c. (ISBN978-5-87623-512-1, Uch.-izd.l.20,4, reg.#248)
4. E.V.Suvorov, I.A.Smirnova Novyi podkhod v ponimanii mekhanizmov difraktsionnogo izobrazheniya dislokatsii v rentgenovskoi topografii Pisma ZhTF 2012, 38,21, c.70-76

	Publications in Math-Net.Ru	Citations
	2019
1.	I. A. Smirnova, E. V. Shulakov, E. V. Suvorov, “Formation of edge dislocation image under anomalous X-ray transmission”, Fizika Tverdogo Tela, 61:8 (2019), 1499–1504 ; Phys. Solid State, 61:8 (2019), 1444–1449	1
	2016
2.	E. V. Suvorov, I. A. Smirnova, “A new high-sensitivity X-ray diffraction technique for determining local deformations of a crystal surface using “bending interference fringes””, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:18 (2016), 55–62 ; Tech. Phys. Lett., 42:9 (2016), 955–958	5
	2015
3.	E. V. Suvorov, I. A. Smirnova, “X-ray diffraction imaging of defects in topography (microscopy) studies”, UFN, 185:9 (2015), 897–915 ; Phys. Usp., 58:9 (2015), 833–849	11
	1986
4.	I. V. Grekhov, A. F. Kardo-Sisoev, I. A. Smirnova, S. V. Shenderei, V. S. Yuferev, “Fast Ionization Waves in a Semiconductor Related with Superradiation”, Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1335–1337
	1985
5.	I. V. Grekhov, V. M. Efanov, A. F. Kardo-Sisoev, I. A. Smirnova, “Semiconductor powerful subnanosecond commutators with more time retentivity under conducting conditions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985), 901–904

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