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Publications in Math-Net.Ru |
Citations |
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2020 |
1. |
N. A. Bekin, “Multiphonon relaxation of $1s(T_{2})$ states of a single ionized selenium donor in silicon”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 922–928 ; Semiconductors, 54:9 (2020), 1112–1118 |
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2019 |
2. |
N. A. Bekin, “On the two-phonon relaxation of excited states of boron acceptors in diamond”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1378–1385 ; Semiconductors, 53:10 (2019), 1340–1347 |
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2018 |
3. |
N. A. Bekin, “Multiphonon intracenter relaxation of boron acceptor states in diamond”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1390–1394 ; Semiconductors, 52:11 (2018), 1500–1504 |
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2016 |
4. |
A. N. Yablonskii, R. Kh. Zhukavin, N. A. Bekin, A. V. Novikov, D. V. Yurasov, M. V. Shaleev, “On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1629–1633 ; Semiconductors, 50:12 (2016), 1604–1608 |
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2015 |
5. |
N. A. Bekin, V. N. Shastin, “Stimulated emission on impurity – band optical transitions in semiconductors”, Kvantovaya Elektronika, 45:2 (2015), 105–112 [Quantum Electron., 45:2 (2015), 105–112 ] |
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