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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11, Pages 1390–1394
DOI: https://doi.org/10.21883/FTP.2018.11.46604.38
(Mi phts5701)
 

This article is cited in 1 scientific paper (total in 1 paper)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Multiphonon intracenter relaxation of boron acceptor states in diamond

N. A. Bekin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (191 kB) Citations (1)
Abstract: The relaxation rates are calculated in the adiabatic approximation, in which the steady-state impurity states are taken to be electronic-vibrational (vibronic) states. The probabilities of transitions between these states with the emission (or absorption) of one or several phonons are calculated in first-order perturbation theory on the assumption that the transitions are a result of the violation of adiabaticity. The electron part of the wave function of the vibronic state is described by a simple Hamiltonian with an isotropic effective mass. The wave function of the ground state is determined by the quantum defect method. According to the calculations, a hole relaxes from the excited boron acceptor state, whose energy is 304 meV higher than the energy of the ground state, to the ground state with the emission of two optical phonons with a rate of $\sim$10$^{11}$ s$^{-1}$. This value is an estimate from above, since the model of nondispersive optical phonons used in the study overestimates the number of phonon modes, whose participation in relaxation is allowed by the energy conservation law. However, despite the rough approximation, it can be concluded that the multiphonon relaxation of boron acceptor states in diamond is a fast process.
Keywords: Boron Acceptor, Intracenter Relaxation, Quantum Defect Method, Isotropic Effective Mass, Single-frequency Approximation.
Funding agency Grant number
Russian Foundation for Basic Research 17-02-01325
18-502-12077
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 11, Pages 1500–1504
DOI: https://doi.org/10.1134/S1063782618110040
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Bekin, “Multiphonon intracenter relaxation of boron acceptor states in diamond”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1390–1394; Semiconductors, 52:11 (2018), 1500–1504
Citation in format AMSBIB
\Bibitem{Bek18}
\by N.~A.~Bekin
\paper Multiphonon intracenter relaxation of boron acceptor states in diamond
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 11
\pages 1390--1394
\mathnet{http://mi.mathnet.ru/phts5701}
\crossref{https://doi.org/10.21883/FTP.2018.11.46604.38}
\elib{https://elibrary.ru/item.asp?id=36903620}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 11
\pages 1500--1504
\crossref{https://doi.org/10.1134/S1063782618110040}
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  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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